This situation gives rise to a phenomenon known as tail current, wherein the turn-off is slowed down. Having said that, considering that for the output flow path of holes, the accumulation of minority carriers at the turn-off periods, is prohibited due to the particular IGBT design.
The fundamental framework of the IGBT is same as that of a MOSFET having a p+ layer put into the drain (collector) section, and also an extra pn junction.ĭue to this, whenever minority carriers (holes) tend to be inserted through the p+ layer on to the n- layer with conductivity modulation, the n- layer resistance gets reduced dramatically.Ĭonsequently, the IGBT provides a reduced saturation voltage (smaller ON resistance) compared to a MOSFET when coping with huge current, thus enabling minimal conduction losses. IGBTs, promising fast switching speed along with minimal saturation voltage characteristics, are being used in a extensive range, from commercial applications like in solar energy harnessing units and uninterruptible power supply (UPS), to consumer electronic fields, like temperature control for induction heater cooktops, air conditioning equipment PFC, inverters, and digital camera stroboscopes.įigure 2 below reveals an evaluation between IGBT, bipolar transistor, and MOSFET internal layouts and attributes.
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